I. Silicon Carbide (SiC) MOS: The Performance Champion in High-Temperature, High-Voltage Applications

Core Characteristics

1. Material Advantages: Bandgap width 3.26eV, breakdown electric field 2.8MV/cm (8-10 times that of silicon), thermal conductivity 4.9W/(cm·K) (4-5 times that of silicon)

2. Key Advantages: Junction temperature up to 175-200°C, ultra-low on-resistance above 600V (15mΩ at 650V/100A), 90% reduction in switching losses, short-circuit withstand up to 10μs

3. Core Applications: EV main drives, charging stations, PV inverters, industrial power supplies

4. Key Challenges: Wafer cost 5-10 times that of silicon, yield <60%, requires dedicated drive voltage, EMI issues remain unresolved

II. Gallium Nitride (GaN) MOS: High-Frequency, High-Efficiency Miniature Pioneer

Core Characteristics

1. Material Advantages: Bandgap width 3.4eV, breakdown electric field 3.3MV/cm, high electron mobility, AlGaN/GaN heterojunction forming 2DEG

2. Key Advantages: Switching frequencies reach MHz-level (silicon only 100kHz), ultra-low on-resistance in low-voltage range, no body diode (Qrr≈0)

3.Core Applications: Wireless charging, 5G RF power amplifiers, lithium battery protection, drone ESCs

4.Major Challenges: Requires dedicated driver chips, sensitive to PCB parasitic parameters at high frequencies, stringent thermal design requirements

III. Core Selection Guidelines

1. High-temperature, high-voltage, high-power scenarios (e.g., electric vehicles, charging stations): Prioritize SiC for superior reliability and lower losses

2. High-frequency, miniaturization, high-efficiency scenarios (e.g., wireless charging, drones): Prefer GaN for significant speed and size reduction

3. Extreme cost sensitivity with low performance requirements: Consider silicon-based devices; when balancing performance and cost, evaluate the cost-effectiveness of GaN (single-device replacement for multiple silicon components) or SiC